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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD7185-2
FEATURES
n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression www.DataSheet4U.com Drain Current Input VSWR 3rd Order Intermodulation Distortion Point IDD VSWRin IM3 Po (S.C.L.)=22.0 dBm G1dB SYMBOL P1dB VDD= 10V VGG= -5V dB A dBc 27.0 -42 28.
TMD7185-2 Datasheet
