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TK7A90E Datasheet, Toshiba Semiconductor

TK7A90E mosfet equivalent, silicon n-channel mosfet.

TK7A90E Avg. rating / M : 1.0 rating-11

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TK7A90E Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low l.

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TAGS

TK7A90E
Silicon
N-Channel
MOSFET
TK7A45DA
TK7A50D
TK7A55D
Toshiba Semiconductor

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