logo

TK65G10N1 Datasheet, Toshiba Semiconductor

TK65G10N1 mosfet equivalent, silicon n-channel mosfet.

TK65G10N1 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 240.86KB)

TK65G10N1 Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 .

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS.

Image gallery

TK65G10N1 Page 1 TK65G10N1 Page 2 TK65G10N1 Page 3

TAGS

TK65G10N1
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

Related datasheet

TK65010

TK65015

TK65018

TK65020

TK65025

TK650A60F

TK650STL

TK65127

TK65130

TK65133

TK65218

TK65221

TK65224

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts