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TK2P60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
5.5 ± 0.2 9.5 ± 0.3
1.2 MAX.
TK2P60D Datasheet
