The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK20J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK20J60U
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.
TK20J60U Datasheet
