TK18E10K3 mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 10.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forwa.
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