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TK16A55D - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source v.

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Datasheet Details

Part number TK16A55D
Manufacturer Toshiba
File Size 225.77 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK16A55D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK16A55D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
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