TK15E60U Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (V.

* Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ.) .

TK150E09NE

TK150F04K3

TK150F04K3L

TK15121

TK15125

TK15210

TK15211

TK15220

TK15321

TK15322

TK15323

TK15324

TK15325