TK12X60U Datasheet - Toshiba Semiconductor

TK12X60U N-Channel MOSFET

www.DataSheet4U.com TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12X60U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source volta.

TK12X60U_ToshibaSemiconductor.pdf