Part number:
TK12V60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
261.71 KB
Description:
Silicon n-channel mosfet.
TK12V60W-ToshibaSemiconductor.pdf
Datasheet Details
TK12V60W Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain
TK12V60W-ToshibaSemiconductor.pdf
Datasheet Details
TK12V60W
Toshiba ↗ Semiconductor
261.71 KB
Silicon n-channel mosfet.
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TK12V60W Distributor