TK12A60W Toshiba Semiconductor

(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2..

• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to S.