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TK12A50E Datasheet, Toshiba Semiconductor

TK12A50E mosfets equivalent, mosfets.

TK12A50E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 229.97KB)

TK12A50E Datasheet
TK12A50E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 229.97KB)

TK12A50E Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 .

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS.

Image gallery

TK12A50E Page 1 TK12A50E Page 2 TK12A50E Page 3

TAGS

TK12A50E
MOSFETs
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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