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TK10Q60W - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10Q60W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (N.

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Datasheet Details

Part number TK10Q60W
Manufacturer Toshiba
File Size 246.30 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK10Q60W Datasheet

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MOSFETs Silicon N-Channel MOS (DTMOS) TK10Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10Q60W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 9.7 A Drain current (pulsed) (Note 1) IDP 38.8 Power dissipation (Tc = 25) PD 80 W Single-pulse avalanche energy (Note 2) EAS 121 mJ Avalanche current IAR 2.