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TK10J80E Datasheet, Toshiba Semiconductor

TK10J80E mosfet equivalent, silicon n-channel mosfet.

TK10J80E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 226.43KB)

TK10J80E Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakag.

Image gallery

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TAGS

TK10J80E
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

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