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TK10A80E Datasheet, Toshiba Semiconductor

TK10A80E mosfet equivalent, silicon n-channel mosfet.

TK10A80E Avg. rating / M : 1.0 rating-129

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TK10A80E Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low l.

Image gallery

TK10A80E Page 1 TK10A80E Page 2 TK10A80E Page 3

TAGS

TK10A80E
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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