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TJ10S04M3L Datasheet, Toshiba Semiconductor

TJ10S04M3L mosfets equivalent, mosfets.

TJ10S04M3L Avg. rating / M : 1.0 rating-11

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TJ10S04M3L Datasheet

Features and benefits

(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhanceme.

Application


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* Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) .

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TAGS

TJ10S04M3L
MOSFETs
TJ100A
TJ100F04M3L
TJ100F06M3L
Toshiba Semiconductor

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