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TIM5964-6UL Datasheet, Toshiba Semiconductor

TIM5964-6UL fet equivalent, microwave power gaas fet.

TIM5964-6UL Avg. rating / M : 1.0 rating-12

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TIM5964-6UL Datasheet

Features and benefits


* HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz
* HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAG.

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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TAGS

TIM5964-6UL
MICROWAVE
POWER
GaAs
FET
Toshiba Semiconductor

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