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TIM5964-6UL - MICROWAVE POWER GaAs FET

Key Features

  • HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz.
  • HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz.
  • BROAD BAND.

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Full PDF Text Transcription (Reference)

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MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ΔTch IDS1 ΔG G1dB SYMBOL P1dB ( Ta= 25°C ) UNIT dBm dB A dB % MIN. 37.5 9.0 ⎯ ⎯ ⎯ -44 ⎯ ⎯ TYP. MAX. 38.5 10.0 1.6 ⎯ 40 -47 1.6 ⎯ ⎯ ⎯ 1.9 ±0.6 ⎯ ⎯ 1.9 80 CONDITIONS VDS= 10V f = 5.9 to 6.4GHz ηadd IM3 Two-Tone Test Po= 27.