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TIM5964-60SL Datasheet, Toshiba Semiconductor

TIM5964-60SL fet equivalent, microwave power gaas fet.

TIM5964-60SL Avg. rating / M : 1.0 rating-16

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TIM5964-60SL Datasheet

Features and benefits

・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at.

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TAGS

TIM5964-60SL
MICROWAVE
POWER
GaAs
FET
Toshiba Semiconductor

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