TIM5964-4UL datasheet, fet equivalent, Toshiba Semiconductor

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･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER.

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Toshiba Semiconductor

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Toshiba (https://www.toshiba.com/) Semiconductor

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TIM5964-4UL Datasheet, Toshiba Semiconductor

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