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MICROWAVE POWER GaAs FET www.DataSheet4U.com
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM5964-35SLA-251
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 ∆G VDS= 10V f = 5.9 – 6.75GHz CONDITION UNIT MIN. TYP. MAX. dBm dB A dB % Two Tone Test Po=35.0dBm
(Single Carrier Level)
45.0 8.
TIM5964-35SLA-251 Datasheet
