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TIM5964-30SL Datasheet, Toshiba Semiconductor

TIM5964-30SL fet equivalent, microwave power gaas fet.

TIM5964-30SL Avg. rating / M : 1.0 rating-11

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TIM5964-30SL Datasheet

Features and benefits

n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4G.

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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TAGS

TIM5964-30SL
MICROWAVE
POWER
GaAs
FET
TIM5964-30UL
TIM5964-35SLA
TIM5964-35SLA-251
Toshiba Semiconductor

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