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TIM3742-16SL-341 Datasheet, Toshiba Semiconductor

TIM3742-16SL-341 fet equivalent, microwave power gaas fet.

TIM3742-16SL-341 Avg. rating / M : 1.0 rating-11

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TIM3742-16SL-341 Datasheet

Features and benefits


* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level
* HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz
* HIGH GAIN G1dB=10.0dB at 3..

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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TAGS

TIM3742-16SL-341
MICROWAVE
POWER
GaAs
FET
Toshiba Semiconductor

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