TC59LM906AMG-50 Datasheet, Toshiba Semiconductor

PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max).

where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of h.

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906.

TC59LM906AMG-37

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TC59LM914AMG-37

TC59LM914AMG-50

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TC59

TC593002