TC55VBM316AFTN cmos equivalent, mos digital integrated circuit silicon gate cmos.
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* Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 an.
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range .
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to .
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