TC55V16256FTI-15 datasheet, cmos equivalent, Toshiba Semiconductor

TC55V16256FTI-15 cmos equivalent, mos digital integrated circuit silicon gate cmos.

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Features and benefits

* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cyc.

Application

where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The T.

Description

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power.

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