TC55NEM216AFTN70 cmos equivalent, (tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos.
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* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data .
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range .
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circui.
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