Datasheet4U Logo Datasheet4U.com

TC5117400BSJ-70 - DRAM

Download the TC5117400BSJ-70 datasheet PDF. This datasheet also covers the TC5117400BSJ variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Key Features

  • include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
  • 4,194,304 word by 4 bit organization.
  • Fast access time and cycle time.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC5117400BSJ_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.