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TC5117400BSJ-60 - DRAM

Download the TC5117400BSJ-60 datasheet PDF. This datasheet also covers the TC5117400BSJ variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TC5117400BSJ_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil).

Overview

www.DataSheet4U.com TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM.

Key Features

  • include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
  • 4,194,304 word by 4 bit organization.
  • Fast access time and cycle time.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • L.

More Datasheets from Toshiba

Part Number Description
TC5117400BSJ-70 DRAM
TC5117400BSJ DYNAMIC RAM
TC5117400BST DYNAMIC RAM
TC5117400BST-60 DRAM
TC5117400BST-70 DRAM
TC511402 1048576 x 4 BIT DYNAMIC RAM
TC511402AJ-60 DRAM
TC511402AP-60 DRAM
TC511402ASJ-60 DRAM
TC511402AZ-60 DRAM