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TC5117400BSJ-60 - DRAM

Download the TC5117400BSJ-60 datasheet PDF. This datasheet also covers the TC5117400BSJ variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TC5117400BSJ_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Overview

www.DataSheet4U.com TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM.

Key Features

  • include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
  • 4,194,304 word by 4 bit organization.
  • Fast access time and cycle time.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • L.

More Datasheets from Toshiba

Part Number Description
TC5117400BSJ-70 DRAM
TC5117400BSJ DYNAMIC RAM
TC5117400BST DYNAMIC RAM
TC5117400BST-60 DRAM
TC5117400BST-70 DRAM
TC511402 1048576 x 4 BIT DYNAMIC RAM
TC511402AJ-60 DRAM
TC511402AP-60 DRAM
TC511402ASJ-60 DRAM
TC511402AZ-60 DRAM