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SSM6N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FE
High Speed Switching Applications Analog Switching Applications
• • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm
(Q1, Q2 Common)
Drain-Source voltage Gate-Source voltage Drain current
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6N15FE Datasheet
