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MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J216FE
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Configuration
ES6
SSM6J216FE
1.2.5.6 : Drain 3 : Gate 4 : Source
Start of commercial production
2012-11
1
2014-03-12
Rev.3.0
SSM6J216FE
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-12
V
Gate-source voltage
VGSS
±8
Drain current (DC)
(Note 1)
ID
-4.
SSM6J216FE Datasheet
