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SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch DC-DC Converter
Unit: mm
• Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V)
: Ron = 0.26 Ω (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±12
V
Drain current
DC
ID
−1.3
A
Pulse
IDP (Note 2)
−2.6
Drain power dissipation
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in temperature, etc.
SSM6J08FU Datasheet
