SSM3K336R mosfet equivalent, silicon n-channel mosfet.
(1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)
3. Packaging and Internal Cir.
* Power Management Switches
* DC-DC Converters
2. Features
(1) 4.5 V gate drive voltage. (2) Low drain-source on.
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