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SSM3K329R Datasheet, Toshiba Semiconductor

SSM3K329R mosfet equivalent, silicon n-channel mosfet.

SSM3K329R Avg. rating / M : 1.0 rating-11

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SSM3K329R Datasheet

Features and benefits

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VG.

Application


* Power Management Switches
* High-Speed Switching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-sourc.

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SSM3K329R Page 1 SSM3K329R Page 2 SSM3K329R Page 3

TAGS

SSM3K329R
Silicon
N-Channel
MOSFET
SSM3K320T
SSM3K324R
SSM3K301T
Toshiba Semiconductor

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