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SSM3K318T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K318T
○ Load Switching Applications ○ High-Speed Switching Applications
• 4.5 V drive • Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V)
: RDS(ON) = 107 mΩ (max) (@VGS = 10 V)
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
0～0.1 0.15
0.16±0.05
2.9±0.2 1.9±0.2 0.95 0.95
Absolute Maximum Ratings (Ta = 25°C)
１
Characteristic
Symbol
Rating
Unit
２
３
Drain-Source voltage
VDSS
60
V
Gate-Source voltage
VGSS
±20
V
0.7±0.05
Drain current
DC
ID
Pulse
IDP
2.5 A
5.0
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
1: Gate
Note: Using continuously under heavy loads (e.g.
SSM3K318T Datasheet
