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SSM3J109TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.8 V drive • Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V)
Ron = 172 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-2 A
-4
Drain power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J109TU Datasheet
