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SSM3J02F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch High Speed Switching Applications
· · · Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating -30 ±10 -600 -1200 200 150 -55~150 Unit V V mA mW °C °C
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1F
Weight: 0.012 g (typ.
SSM3J02F Datasheet
