RN4603 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in SM6 (super mini type with 6 leads) - With built-in bias resistors - Simplify circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 22kΩ (Q1, Q2 mon) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO Rating - 50 - 50 - 10 - 100 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO Rating 50 50 10 100 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Unit V V V m A Unit V V V m A ©...