RN1210 Datasheet | Toshiba

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN2210, RN2211 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150 - 55~150 Unit V V V m A m W °C °C JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1210 RN1211 Symbol ICBO IEBO h FE VCE (sat) f T Cob R1 Test Circuit ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1m A IC = 5m A, IB = 0.25m A VCE = 10V, IC = 5m A VCB = - 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit n A n A ― V MHz p F kΩ 2001-06-07 RN1210,RN1211 2001-06-07 RN1210,RN1211 2001-06-07 RN1210,RN1211 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are...