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MT6L76FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L76FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
0.1±0.05 1.0±0.05 0.8±0.05 0.1±0.05 0.15±0.05
Unit: mm
0.35 0.35
1.0±0.05
0.7±0.05
• •
It exsels in the buffer and oscillation use. Leed (Pb)-free.
1 2 3
6 5 4 0.1±0.05
Mounted Devices
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Q1 Three-pin fSM mold products are corresponded MT3S06FS Q2 MT3S106FS
Maximum Ratings (Ta = 25°C)
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL Q1 VCBO VCEO VEBO IC IB 10 5 1.5 15 7 100 110 (Note 2) Junction temperature Storage temperature range
2
0.48 -0.04
+0.