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MT3S36T Datasheet TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

Manufacturer: Toshiba

Overview: www.DataSheet4U.com MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit:.

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Datasheet Details

Part number MT3S36T
Manufacturer Toshiba
File Size 148.17 KB
Description TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
Download MT3S36T Download (PDF)

Key Features

  • Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 36 18 100 150.
  • 55~150 Unit V V V mA mA mW °C °C JEITA.

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