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MT3S15TU - Silicon NPN Epitaxial Planar Type Transistor

Features

  • Low-Noise Figure: NF=1.6 dB (typ. ) (@ f=1 GHz).
  • High Gain: |S21e|2=13.5 dB (typ. ) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 Marking 3 T3 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-basevoltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 12 6 2.

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Datasheet Details

Part number MT3S15TU
Manufacturer Toshiba
File Size 164.02 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S15TU Datasheet

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Full PDF Text Transcription (Reference)

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz) • High Gain: |S21e|2=13.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 Marking 3 T3 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-basevoltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 12 6 2 80 10 900 150 −55 to 150 Unit V V V mA mA mW °C °C 0.7±0.05 1. BASE 2. EMITTER 3. COLLECTOR UFM JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2U1B Weight: 6.6 mg (typ.
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