MG300Q2YS61 Datasheet - Toshiba Semiconductor

MG300Q2YS61 High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. Unit: mm Equivalent Circuit C1 G1 JEDEC E1 E1/C2 ― ― 2-109C4A JEITA TOSHIBA G2 E2 E2 Weig.

MG300Q2YS61_ToshibaSemiconductor.pdf

MG300Q2YS61 Datasheet Preview — Preview of MG300Q2YS61 PDF

Datasheet Details

Part number:

MG300Q2YS61

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

269.93 KB

Description:

High power switching applications motor control applications.

📁 Related Datasheet

MG300Q2YS60A High Power Switching Applications Motor Control Applications (Toshiba Semiconductor)

MG300Q2YS60A High Power Switching Applications Motor Control Applications (Mitsubishi Electric)

MG300Q2YS65H IGBT Module Silicon N Channel IGBT (Toshiba Semiconductor)

MG300Q2YS40 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG300Q2YS50 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG300Q1UK1 NPN (ETC)

MG300Q1UK1 TRANSISTOR MODULES (ETC)

MG300Q1US11 INSULATED GATE BIPOLAR TRANSISTOR (Toshiba)

TAGS

MG300Q2YS61 MG300Q2YS61 High Power Switching Applications Motor Control Applications Toshiba Semiconductor

MG300Q2YS61 Distributor