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Toshiba Electronic Components Datasheet

M3JZ47 Datasheet

SM3JZ47

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SM3GZ47,SM3JZ47
www.DataSheet4U.TcOomSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3GZ47,SM3JZ47
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak OffState Voltage : VDRM = 400, 600V
l R.M.S ONState Current
: IT (RMS) = 3A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
OffState Voltage
SM3GZ47
SM3JZ47
R.M.S OnState Current
(Full Sine Waveform Tc = 110°C)
VDRM
IT (RMS)
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I2t Limit Value (t = 1~10ms)
Critical Rate of Rise of OnState
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
VISOL
RATING
400
600
3
30 (50Hz)
33 (60Hz)
4.5
50
5
0.5
10
2
40~125
40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
Note 1: di / dt test condition
VDRM = 0.5×Rated
ITM 4.5A
tgw 10µs
tgr 250ns
igp = IGT×2.0
1 2001-07-13


Toshiba Electronic Components Datasheet

M3JZ47 Datasheet

SM3JZ47

No Preview Available !

www.DEaLtaESCheTeRt4IUC.cAoLm CHARACTERISTICS (Ta = 25°C)
SM3GZ47,SM3JZ47
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Repetitive Peak OffState
Current
Gate Trigger Voltage
Gate Trigger Current
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
OffState Voltage
Critical Rate of Rise of
OffState Voltage at
Commutation
IDRM
VDRM = Rated
― ― 20 µA
I
T2 (+), Gate (+)
― ― 1.5
II
III
VGT
VD = 12V
RL = 20
T2 (+), Gate ()
T2 (), Gate ()
― ― 1.5
V
― ― 1.5
IV
T2 (), Gate (+)
―――
I
T2 (+), Gate (+)
― ― 20
II
III
IGT
VD = 12V
RL = 20
T2 (+), Gate ()
T2 (), Gate ()
― ― 20
mA
― ― 20
IV
T2 (), Gate (+)
―――
VTM
VGD
IH
Rth (jc)
ITM = 4.5A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
― ― 1.5 V
0.2 ― ― V
― ― 30 mA
― ― 4.2 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
300 V / µs
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di /dt) c = 2.0A / ms
10 ― ― V / µs
MARKING
NUMBER
SYMBOL
* 1 TOSHIBA PRODUCT MARK
* 2 TYPE
SM3GZ47
SM3JZ47
*3
MARK
M3GZ47
M3JZ47
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
2 2001-07-13


Part Number M3JZ47
Description SM3JZ47
Maker Toshiba Semiconductor
Total Page 5 Pages
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