900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

M2LZ47 Datasheet

SM2LZ47

No Preview Available !

SM2LZ47
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2LZ47
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak OffState Voltage : VDRM = 800V
l R.M.S. OnState Current
: IT (RMS) = 2A
l High Commutation (dv / dt)
: (dv / dt) c = 5V / µs (Min.)
l Isolation Voltage
: VISOL = 1500V AC
www.DataSheet4U.com
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak OffState Voltage
R.M.S. OnState Current
(Full Sine Waveform)
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VISOL
800
2
8 (50Hz)
8.8 (60Hz)
0.32
50
3
0.3
10
1.6
40~125
40~125
1500
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Note: di / dt test condition
VDRM = 400V, ITM 3A, tgw 10µs, tgr 250ns, igp = IGT × 2.0
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
1 2001-07-10


Toshiba Electronic Components Datasheet

M2LZ47 Datasheet

SM2LZ47

No Preview Available !

SM2LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
Gate Trigger Voltage
Gate Trigger Current
Peak OnState Voltage
www.DataSheet4U.com
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
I
II
III
I
II
III
Critical Rate of Rise of OffState Voltage
Critical Rate of Rise of OffState Voltage
at Communication
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (ja)
dv / dt
(dv / dt) c
VDRM = 800V
VD = 12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
VD = 12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
ITM = 3A
VD = 800V, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Ambient, AC
VDRM = 800V, Tj = 125°C
Exponential Rise
VDRM = 400V, Tj = 125°C
(di / dt) c = 0.5A / ms
MIN TYP. MAX UNIT
― ― 20 µA
― ― 1.5
― ― 1.5 V
― ― 1.5
― ― 10
― ― 10 mA
― ― 10
― ― 2.0 V
0.2 ― ― V
― ― 10 mA
― ― 58 °C / W
500 V / µs
5 ― ― V / µs
MARKING
NUMBER
SYMBOL
*1 Toshiba Product Mark
*2 TYPE
SM2LZ47
MARK
M2LZ47
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-07-10


Part Number M2LZ47
Description SM2LZ47
Maker Toshiba Semiconductor
Total Page 5 Pages
PDF Download

M2LZ47 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 M2LZ47 SM2LZ47
Toshiba Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy