K3498 Datasheet - Toshiba Semiconductor

K3498 2SK3498

2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate vol.

K3498_ToshibaSemiconductor.pdf