K30A06J3A Datasheet - Toshiba Semiconductor

K30A06J3A TK30A06J3A

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ.

K30A06J3A Features

* nted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limi

K30A06J3A-ToshibaSemiconductor.pdf