K2985 Datasheet - Toshiba Semiconductor

K2985 2SK2985

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) 2SK2985 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 70 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage D.

K2985-ToshibaSemiconductor.pdf