K2837 - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Datasheet Details

Part number	K2837
Manufacturer	Toshiba Semiconductor
File Size	485.16 KB
Description	Silicon N-Channel MOSFET
Datasheet	K2837 Datasheet
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Full PDF Text Transcription

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2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2837 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 20 80 150 960 20 15 150 −55 to 150 www.DataSheet.co.kr Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3.

Published: Apr 9, 2007 |