K1119 Datasheet - Toshiba Semiconductor

K1119 2SK1119

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5) 2SK1119 DC DC Converter and Motor Drive Applications z Low drain source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain .

K1119-ToshibaSemiconductor.pdf