J512 Datasheet, Toshiba Semiconductor

J512 transistor equivalent, silicon p channel mos type field effect transistor.

J512

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Application

Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S.

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Toshiba Semiconductor

Manufacturer

Toshiba (https://www.toshiba.com/) Semiconductor

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